AO7408 20v n-channel mosfet general description product summary v ds i d (at v gs =10v) 2a r ds(on) (at v gs =4.5v) < 62m w r ds(on) (at v gs =2.5v) < 75m w r ds(on) (at v gs =1.8v) < 85m w symbol the AO7408 uses advanced trench technology to provi de excellent r d s(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitab le for use as a load switch or in pwm applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v g d s d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-323) top view bottom view pin 1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 0.22 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w parameter typ max c/w r q ja 300 340 360 v 8 gate-source voltage drain-source voltage 20 v maximum units parameter a i d 2 1.5 16 t a =25c t a =70c pulsed drain current c continuous drain current 0.35 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 280 425 320 maximum junction-to-ambient a units g d s d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-323) top view bottom view pin 1 rev 3: july 2010 www.aosmd.com page 1 of 5
AO7408 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.7 1 v i d(on) 16 a 50 62 t j =125c 70 90 56 75 m w 66 85 m w g fs 15 s v sd 0.7 1 v i s 0.35 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 w q g 2.9 4 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns t 3.2 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =10v, r =5 w , gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =10v, i d =2a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current m w on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =2a forward transconductance diode forward voltage i s =1a,v gs =0v v ds =5v, i d =2a v gs =1.8v, i d =1a v gs =2.5v, i d =1.8a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 3.2 ns t d(off) 21 ns t f 3 ns t rr 14 19 ns q rr 3.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =2a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =5 w , r gen =3 w turn-off fall time i f =2a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25
AO7408 typical electrical and thermal characteristics 17 52 10 0 18 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =2a v gs =2.5v i d =1.8a v gs =1.8v i d =1a 25
AO7408 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 1 2 2 3 3 4 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =2a 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25
AO7408 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt t - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 3: july 2010 www.aosmd.com page 5 of 5
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